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FTK4N65I PDF预览

FTK4N65I

更新时间: 2024-10-29 02:51:39
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页数 文件大小 规格书
7页 387K
描述
4 Amps, 650 Volt N-CHANNEL POWER MOSFET

FTK4N65I 数据手册

 浏览型号FTK4N65I的Datasheet PDF文件第2页浏览型号FTK4N65I的Datasheet PDF文件第3页浏览型号FTK4N65I的Datasheet PDF文件第4页浏览型号FTK4N65I的Datasheet PDF文件第5页浏览型号FTK4N65I的Datasheet PDF文件第6页浏览型号FTK4N65I的Datasheet PDF文件第7页 
SEMICONDUCTOR  
FTK4N65P/F/I/D  
TECHNICAL DATA  
4 Amps, 650 Volt  
Power MOSFET  
N-CHANNEL POWER MOSFET  
I :  
1
TO - 251  
D :  
DESCRIPTION  
1
TO - 252  
The FTK4N65 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged avalanche  
characteristics. This power MOSFET is usually used at high speed  
switching applications in power supplies, PWM motor controls, high  
efficient DC to DC converters and bridge circuits.  
P :  
1
TO - 220  
F :  
FEATURES  
1
TO - 220F  
* RDS(ON) = 2.7Ω@VGS = 10V  
* Ultra low gate charge ( typical 12 nC )  
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )  
* Fast switching capability  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
FTK4N65P  
Package  
Packing  
1
G
2
D
3
TO-220  
TO-220F  
TO-251  
TO-252  
S
Tube  
Tube  
Tube  
G
G
G
D
D
D
S
S
S
FTK4N65F  
FTK4N65I  
FTK4N65D  
Tape Reel  
Note: Pin Assignment:  
G: Gate  
D: Drain  
S: Source  
2012. 07. 03  
Revision No : 0  
1/7  

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