Datasheet > FTK65T260DD

FTK65T260DD

更新时间： 2024-11-02 02:51:59

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
9页	707K
描述
N-Channel Super Junction Power MOSFET

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FTK65T260DD 数据手册

SEMICONDUCTOR

TECHNICAL DATA

FTK65T260DD/P/F

N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

220

mΩ

R_DS(ON)TYP

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

FTK65T260DD

FTK65T260P

FTK65T260F

TO-263

NCE65T260D

NCE65T260

NCE65T260F

TO-220

TO-220F

TO-263

TO-220

TO-220F

Unit

Table 1. Absolute Maximum Ratings (T_C=25°C)

Parameter

FTK65T260DD

Symbol

FTK65T260F

FTK65T260P

650

±30

Drain-Source Voltage (V^GS=0V）

V^DS

V^GS

Gate-Source Voltage (V^DS=0V) AC (f>1 Hz)

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

15*

10*

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

60*

Pulsed drain current

Maximum Power Dissipation(Tc=25°C)

131

1.05

33.2

0.265

Derate above 25°C

W/°C

(Note 2)

304

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

Avalanche current

Repetitive Avalanche energy, t_ARlimited by T_jmax

(Note 1)

1.6

E_AR

2018. 12. 24

Revision No : 0

1/9

12 3 4 5 6 7...9

中文翻译

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