Datasheet > FTK5N80P

FTK5N80P

更新时间： 2024-01-19 03:17:53

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
8页	622K
描述
5.0 Amps, 800 Volts N-Channel MOS -FET

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数据手册

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FTK5N80P 数据手册

SEMICONDUCTOR

FTK5N80P/D/DD

TECHNICAL DATA

5.0 Amps, 800 Volts N-Channel MOS-FET

DESCRIPTION

These N-Channel enhancement mode power field effect

Transistors are produced using planar stripe, DMOS

technology.

P :

This advanced technology has been especially tailored

to minimize on - state resistance , provide superior

switching performance,and Withstand high energy pulse

in the avalanche and commutaion mode .These devices

are well suited for high efficiency switch mode power

TO-220

F :

supply electronic lamp ballasts

based on half bridge topology.

TO-220F

FEATURES

* RDS(ON) = 2.7Ω@VGS = 10V

* Fast switching capability

* Avalanche energy tested

DD :

* Improved dv/dt capability, high ruggedness

TO-263

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Order Number

Package

Packing

FTK5N80P

FTK5N80F

FTK5N80DD

TO-220

TO-220F

TO-263

Tube

Reel & Taping

Note: Pin Assignmen:

G: Gate

D: Drain

S: Source

2013. 01. 03

Revision No : 0

1/8

12 3 4 5 6 7 8

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