Datasheet > FTK640DD

FTK640DD

更新时间： 2022-06-24 15:41:06

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	433K
描述
18A, 200V, 0.155Î© , N-CHANNEL POWER MOS FET

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FTK640DD 数据手册

SEMICONDUCTOR

FTK640D/DD/P/F

TECHNICAL DATA

18A, 200V, 0.155Ω , N-CHANNEL POWER MOS FET

P :

DESCRIPTION

The N-Channel enhancement mode silicon gate power MOSFET

is designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers.

TO-220

F :

FEATURES

TO-220F

* 18A, 200V, Low R_DS(ON)(0.155Ω)

* Single Pulse Avalanche Energy Rated

* Rugged - SOA is Power Dissipation Limited

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

DD :

TO-263

D :

SYMBOL

TO - 252

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Order Number

Package

Packing

FTK640P

FTK640F

FTK640DD

FTK640D

TO-220

TO-220F

TO-263

TO-252

Tube

Note: Pin Assignment:

G: Gate

D: Drain S: Source

2014. 3. 10

Revision No : 0

1/7

12 3 4 5 6 7

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