Datasheet > FTK5N50DD

FTK5N50DD

更新时间： 2024-01-12 17:16:45

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	373K
描述
4.4A, 500V, 1.5Î© N-CHANNEL POWER MOSFET

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FTK5N50DD 数据手册

SEMICONDUCTOR

FTK5N50P/F/DD/D/I

TECHNICAL DATA

4.4A, 500V, 1.5Ω

Power MOSFET

N-CHANNEL POWER MOSFET

DESCRIPTION

I :

TO - 251

FTK5N50 is 500V High voltage N-Channel enhancement

mode power MOS-FET chip fabricated in advanced

silicon epitaxial planar technology;

D :

TO - 252

Advanced termination scheme to provide enhanced voltage-

blocking capability;

DD :

Avalanche Energy Specified;

TO-263

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode;

P :

FTK5N50 product is widely used in AC-DC power

suppliers, DC-DC converters and H-bridge PWM motor

drivers.

TO - 220

F :

TO - 220F

FEATURES

* 4.4A, 500V, RDS(ON)=1.5Ω

* Single Pulse Avalanche Energy Rated

* Rugged - SOA is Power Dissipation Limited

* Fast Switching Speeds

SYMBOL

* Linear Transfer Characteristics

* High Input Impedance

ORDERING INFORMATION

Pin Assignment

Packing

Ordering Number

Package

FTK5N50P

FTK5N50F

FTK5N50DD

FTK5N50I

FTK5N50D

TO-220

TO-220F

TO-263

TO-251

Tube

Tape Reel

Tube

TO-252

Tape Reel

Note: Pin Assignment:

G: Gate

D: Drain

S: Source

2012. 06. 26

Revision No : 0

1/7

12 3 4 5 6 7

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