Datasheet > FTK65T180

FTK65T180

更新时间： 2024-02-06 00:40:32

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
9页	858K
描述
N-Channel Super Junction Power MOSFET

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FTK65T180 数据手册

SEMICONDUCTOR

FTK65T180/F/DD

TECHNICAL DATA

N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

180

mΩ

R_{DS(ON) MAX}

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

FTK65T180

FTK65T180F

FTK65T180DD

TO-220

NCE65T180

NCE65T180F

NCE65T180

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

FTK65T180

FTK65T180DD

Parameter

Symbol

Unit

FTK65T180F

650

Drain-Source Voltage (V^GS=0V）

V^DS

V^GS

±30

Gate-Source Voltage (V^DS=0V), AC (f>1 Hz)

Continuous Drain Current at T_C=25°C

Continuous Drain Current at T_C=100°C

13.2

21*

13.2*

84*

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

Pulsed drain current

Maximum Power Dissipation(T_C=25°C)

188

1.5

33.8

0.27

Derate above 25°C

W/°C

(Note 2)

441

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

10.5

Avalanche current

Repetitive Avalanche energy,t_ARlimited by T_Jmax

(Note 1)

0.7

E_AR

2018. 10. 04

Revision No : 0

1/9

12 3 4 5 6 7...9

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