Datasheet > FTA1365-E

FTA1365-E

更新时间： 2024-09-14 02:51:27

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	590K
描述
General Purpose Transistors

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FTA1365-E 数据手册

SEMICONDUCTOR

FTA1365

TECHNICAL DATA

General Purpose Transistors

PNP Silicon

DESCRIPTION

FTA1365 is a mini package

silicon PNP epitaxial transistor,

designed with high collector current and small VCE(sat).

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)= -0.2V typ

● Excellent linearity of DC forward current gain.

● Super mini package for easy mounting

SOT– 23

● High collector current I =-1A

● High gain band width product f =180MHz typ

● We declare that the material of product compliance with RoHS requirements.

● We declare that the material of product is ROHS compliant

COLLECTOR

APPLICATION

BASE

Small type motor drive, relay drive, power supply.

EMITTER

MAXIMUM RATINGS（Ta=25℃）

ORDERING INFORMATION

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

-25

Unit

Device

Marking

Shipping

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

FTA1365-E

FTA1365-F

FTA1365-G

3000/Tape & Reel

-20

-4

- 00

℃

P_c

Collector dissipation

Junction temperature

Storage temperature

150

＋125

T_j

T_stg

-55～＋125

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

Typ

Max

C to B break down voltage

V(BR)^CBOI _C=-10μA , I_E=0

-25

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

V(BR)^EBO

V(BR)^CEO

ICBO

I _E=-10μA , I _C=0

I _C=-100μA ,R _BE=∞

V _CB=-25V, I _E=0mA

V _EB=-2V, I _C=0mA

V _CE=-4V, I _C=-100mA

-4

-20

-1

800

μA

IEBO

hFE

※

150

C to E Saturation Vlotage

Gain bandwidth product

VCE(sat) I _C=-500mA ,I_B=-25mA

fT V _CE=-6V, I _E=10mA

-0.2

180

-0.5

MHz

※） It shows hFE classification in below table.

Item

Ｅ

Ｆ

Ｇ

150～300

250～500

400～800

ｈＦＥ Item

2011. 11. 28

Revision No : 0

1/3

12 3

中文翻译

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