Datasheet > FTA4N65

FTA4N65

更新时间： 2024-09-15 00:04:27

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描述
4A/650V N-Channel MOSFET TO-220 TO-220F

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中文翻译

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数据手册

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FTA4N65 数据手册

FTP04N65

FTA04N65

N-Channel MOSFET

Applications:

• Adaptor

• Charger

V_DSS

650V

R_DS(ON)(Max.)

2.35 Ω

I_D

4.0A

• SMPS Standby Power

• LCD Panel Power

Features:

• Lead Free

• Low ON Resistance

• Low Gate Charge

• Peak Current vs Pulse Width Curve

• Inductive Switching Curves

Ordering Information

TO-220

TO-220F

Not to Scale

PART NUMBER

FTP04N65

PACKAGE

BRAND

FTP04N65

FTA04N65

TO-220

FTA04N65

TO-220F

Absolute Maximum Ratings T_C=25 ^oC unless otherwise specified

Symbol

V_DSS

Parameter

Drain-to-Source Voltage

FTP04N65

FTA04N65

Units

(NOTE *1)

(NOTE *2)

650

I_D

Continuous Drain Current

PulsedDrainCurrent,V_GS@ 10V

Power Dissipation

4.0

4.0*

I_D@ 100 ^oC

Figure 3

I_DM

Figure 6

100

W/ ^oC

P_D

Derating Factor above 25 ^oC

0.80

0.19

V_GS

E_AS

Gate-to-Source Voltage

± 30

250

Single Pulse Avalanche Engergy

L=3.0 mH, I_D=4.1 Amps

I_AS

Pulsed Avalanche Rating

Figure 8

3.0

dv/dt

Peak Diode Recovery dv/dt

Maximum Temperature for Soldering

(NOTE *3)

V/ns

^oC

T_L

T_PKG

Leads at 0.063in (1.6mm) from Case for 10 seconds

Package Body for 10 seconds

300

260

Operating Junction and Storage

Temperature Range

T_Jand T_STG

-55 to 150

*Drain Current limited by Maximum Junction Temperature.

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.

Thermal Resistance

Symbol

R_θJC

R_θJA

Parameter

Junction-to-Case

Junction-to-Ambient

FTP04N65 FTA04N65

Units

^oC/W

Test Conditions

Water cooled heatsink, P adjusted for

1.25

5.2

a peak junction temperature of +150 ^oC

1 cubic foot chamber, free air.

FTP04N60/FTA04N60 REV. A. April. 2006

12 3 4 5 6 7...9

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