Datasheet > FTA1774XT1G

FTA1774XT1G

更新时间： 2024-09-16 01:14:47

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	729K
描述
General Purpose Transistors PNP Silicon

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中文翻译

获取价格

数据手册

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FTA1774XT1G 数据手册

SEMICONDUCTOR

FTA1774

TECHNICAL DATA

General Purpose Transistors

PNP Silicon

ORDERING INFORMATION

Shipping

Device

Marking

3000/Tape & Reel

10000/Tape & Reel

FTA1774XT1G

FTA1774XT3G

Absolute maximun ratings (Ta=25℃)

SC-89

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

−60

Unit

CBO

CEO

EBO

−50

COLLECTOR

−6

−0.15

A (DC)

Collector power

dissipation

0.15

BASE

EMITTER

150

Junction temperature

Storage temperature

Tstg

−

55~ +150

Electrical characteristics (Ta=25℃)

Parameter

Symbol

BV^CBO

Min.

−60

−50

−6

−

Typ. Max.

Unit

Conditions

−

−50µA

−1µA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

CEO

BV^EBO

−

−50µA

−60V

−6V

−50mA/−5mA

−6V, I −1mA

2mA, f

0A, f

CBO

EBO

CE(sat)

−

−0 1

−0 5

560

−

µA

−

Emitter cutoff current

−

IC/IB

Collector-emitter saturation voltage

DC current transfer ratio

120

−

140

4.0

MHz

−12V, I

30MHz

Transition frequency

Cob

−

5.0

1MHz

Output capacitance

Device markeing

FTA1774QT1G=FQ

FTA1774ST1G=FS

FTA1774RT1G=FR

hFE values are classified as follows :

Item

270~560

120~270

180~390

2008. 4. 18

Revision No : 0

1/3

12 3

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