Datasheet > FTA1576AST1G

FTA1576AST1G

更新时间： 2024-11-02 01:06:39

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
4页	95K
描述
General Purpose Transistors PNP Silicon

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中文翻译

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数据手册

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FTA1576AST1G 数据手册

SEMICONDUCTOR

FTA1576

TECHNICAL DATA

General Purpose Transistors

PNP Silicon

ORDERING INFORMATION

Shipping

Device

Package

3000/Tape & Reel

10000/Tape & Reel

SC-70 / SOT-323

FTA1576AXLT1G

FTA1576AXLT3G

* X : hFE Cassified

SC-70 / SOT– 323

MAXIMUM RATINGS

Rating

Symbo

V_CEO

Value

–50

Unit

COLLECTOR

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V_CBO

–60

BASE

V_EBO

–6.0

–150

0.2

Collector Current — Continuous

Collector power dissipation

Junction temperature

I _C

P_C

T_j

EMITTER

mAdc

150

Storage temperature

T_stg

-55 ~+150

DEVICE MARKING

FTA1576AQT1G =FQ FTA1576ART1G=FR FTA1576AST1G =FS

ELECTRICAL CHARACTERISTICS (T_A= 25 C unless otherwise noted.)

Characteris tic

Collector–Emitter Breakdown Voltage

(I_C= –1 mA)

Symbol

V _(BR)CEO

Min

Typ

—

Max

Unit

– 50

—

Emitter–Base Breakdown Voltage

(I_E= – 50 µA)

V _(BR)EBO

V _(BR)CBO

I _CBO

– 6

– 60

—

Collector–Base Breakdown Voltage

(I_C= – 50 µA)

—

Collector Cutoff Current

(V_CB= – 60 V)

– 0.1

µA

Emitter cutoff current

I _EBO

—

(V_EB= – 6 V)

Collector-emitter saturation voltage

(I_C/ I_B= – 50 mA / – 5m A)

DC current transfer ratio

(V _CE= – 6 V, I _C= –1mA)

Transition frequency

V _CE(sat)

—

––

-0.5

560

120

––

f _T

—

140

4.0

––

MHz

(V _CE= – 12 V, I _E= 2mA, f=30MHz )

Output capacitance

5.0

(V _CB= – 12 V, I _E= 0A, f =1MHz )

_FEvalues are classified as follows:

hFE

120~270

180~390

270~560

2008. 3. 20

Revision No : 0

1/4

12 3 4

中文翻译

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