型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS30R06VE3 | EUPEC |
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IGBT-modules | |
FS30R06W1E3 | INFINEON |
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EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC | |
FS30R06W1E3_B11 | INFINEON |
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EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / | |
FS30R06W1E3-B11 | INFINEON |
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Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-22 | |
FS30R06W1E3B11BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FS30R06W1E3BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-22 | |
FS30R06XE3 | EUPEC |
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IGBT-modules | |
FS30R06XL4 | INFINEON |
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Höchstzulässige Werte / maximum rated value | |
FS30SM03 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-247VAR | |
FS30SM-03 | MITSUBISHI |
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Power Field-Effect Transistor, 30A I(D), 30V, 0.046ohm, 1-Element, N-Channel, Silicon, Met |