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FS30SM-5 PDF预览

FS30SM-5

更新时间: 2024-01-29 05:05:12
品牌 Logo 应用领域
POWEREX 晶体开关晶体管脉冲局域网
页数 文件大小 规格书
4页 52K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

FS30SM-5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.38
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.13 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:250 W
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS30SM-5 数据手册

 浏览型号FS30SM-5的Datasheet PDF文件第2页浏览型号FS30SM-5的Datasheet PDF文件第3页浏览型号FS30SM-5的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS30SM-5  
HIGH-SPEED SWITCHING USE  
FS30SM-5  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
1.5  
15.9MAX.  
r
φ 3.2  
2
4.4  
1.0  
5.45  
q
w
e
5.45  
0.6  
2.8  
4
w r  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
q
¡VDSS ................................................................................ 250V  
¡rDS (ON) (MAX) .............................................................. 0.13  
¡ID ..........................................................................................30A  
e
TO-3P  
APPLICATION  
SMPS, DC-DC Converter, battery charger, power  
supply of printer, copier, HDD, FDD, TV, VCR, per-  
sonal computer etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
250  
±30  
V
30  
A
IDM  
Drain current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Weight  
90  
A
PD  
250  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
4.8  
Tstg  
Typical value  
Feb.1999  

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