生命周期: | Transferred | 包装说明: | MODULE-13 |
Reach Compliance Code: | unknown | 风险等级: | 5.56 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 34 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | JESD-30 代码: | R-XUFM-X13 |
元件数量: | 6 | 端子数量: | 13 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 245 ns |
标称接通时间 (ton): | 42 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS30R06W1E3 | INFINEON |
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EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC | |
FS30R06W1E3_B11 | INFINEON |
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EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / | |
FS30R06W1E3-B11 | INFINEON |
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Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-22 | |
FS30R06W1E3B11BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FS30R06W1E3BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-22 | |
FS30R06XE3 | EUPEC |
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IGBT-modules | |
FS30R06XL4 | INFINEON |
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Höchstzulässige Werte / maximum rated value | |
FS30SM03 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-247VAR | |
FS30SM-03 | MITSUBISHI |
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Power Field-Effect Transistor, 30A I(D), 30V, 0.046ohm, 1-Element, N-Channel, Silicon, Met | |
FS30SM06 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-247VAR |