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FQPF11N40C_08 PDF预览

FQPF11N40C_08

更新时间: 2024-10-02 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 1222K
描述
400V N-Channel MOSFET

FQPF11N40C_08 数据手册

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May 2008  
®
QFET  
FQP11N40C/FQPF11N40C  
400V N-Channel MOSFET  
Features  
Description  
10.5 A, 400V, RDS(on)  
=
0.5 @VGS = 10 V  
These N-Channel enhancement mode power field effect transis-  
tors are produced using Fairchild’s proprietary, planar stripe,  
DMOS technology.  
Low gate charge ( typical 28 nC)  
Low Crss ( typical 85pF)  
Fast switching  
This advanced technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutation mode. These devices are well suited for high effi-  
ciency switched mode power supplies, active power factor cor-  
rection, electronic lamp ballasts based on half bridge topology.  
100% avalanche tested  
Improved dv/dt capability  
D
{
G{  
TO-220F  
FQPF Series  
TO-220  
FQP Series  
G D  
S
G
D S  
{
S
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
FQP11N40C FQPF11N40C  
Units  
V
Drain-Source Voltage  
400  
ID  
Drain Current  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
10.5  
6.6  
42  
10.5 *  
6.6 *  
42 *  
A
A
(Note 1)  
IDM  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
± 30  
360  
11  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
13.5  
4.5  
mJ  
V/ns  
W
135  
44  
- Derate above 25°C  
Operating and Storage Temperature Range  
1.07  
0.35  
W/°C  
°C  
°C  
TJ, TSTG  
TL  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
FQP11N40C FQPF11N40C  
Units  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
0.93  
0.5  
2.86  
--  
RθCS  
RθJA  
62.5  
62.5  
©2008 Fairchild Semiconductor Corporation  
FQP11N40C/FQPF11N40C Rev. C1  
1
www.fairchildsemi.com  

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