是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | MODULE |
包装说明: | MODULE-20 | 针数: | 20 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.58 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 16 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X20 | 元件数量: | 6 |
端子数量: | 20 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 69.5 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 260 ns |
标称接通时间 (ton): | 60 ns | VCEsat-Max: | 2.55 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FP10R06KL4B3BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-20 | |
FP10R06KL4B3V6 | ETC |
获取价格 |
IGBT Module | |
FP10R06KL4BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 | |
FP10R06W1E3 | INFINEON |
获取价格 |
EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC | |
FP10R06W1E3_B11 | INFINEON |
获取价格 |
EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / | |
FP10R06W1E3BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 | |
FP10R06YE3 | EUPEC |
获取价格 |
IGBT-modules | |
FP10R06YE3_B4 | EUPEC |
获取价格 |
IGBT-modules | |
FP10R12KE3 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-23 | |
FP10R12NT3 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23 |