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FP10R06YE3 PDF预览

FP10R06YE3

更新时间： 2024-09-17 11:57:15
品牌 Logo 应用领域
EUPEC 晶体晶体管双极性晶体管栅局域网
页数 文件大小 规格书
12页 414K
描述
IGBT-modules

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中文翻译

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FP10R06YE3 技术参数

生命周期：Transferred包装说明：MODULE-23
Reach Compliance Code：unknown风险等级：5.81
外壳连接：ISOLATED最大集电极电流 (IC)：16 A
集电极-发射极最大电压：600 V配置：COMPLEX
JESD-30 代码：R-XUFM-X23元件数量：7
端子数量：23封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管元件材料：SILICON
标称断开时间 (toff)：260 ns标称接通时间 (ton)：26 ns

FP10R06YE3 数据手册

 浏览型号FP10R06YE3的Datasheet PDF文件第2页浏览型号FP10R06YE3的Datasheet PDF文件第3页浏览型号FP10R06YE3的Datasheet PDF文件第4页浏览型号FP10R06YE3的Datasheet PDF文件第5页浏览型号FP10R06YE3的Datasheet PDF文件第6页浏览型号FP10R06YE3的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FP10R06YE3  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
600  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 175°C  
T† = 25°C, TÝÎ = 175°C  
I† ÒÓÑ  
I†  
10  
16  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 175°C  
51,5  
+/-20  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 10 A, V•Š = 15 V  
I† = 10 A, V•Š = 15 V  
I† = 10 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C V†Š ÙÈÚ  
TÝÎ = 150°C  
1,55 2,00  
1,70  
1,80  
V
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 0,30 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
V•ŠÚÌ  
Q•  
4,9  
5,8  
0,10  
0,0  
6,5  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
0,55  
0,017  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
1,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 10 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓÒ = 27 Â  
TÝÎ = 25°C  
tÁ ÓÒ  
0,012  
0,012  
0,012  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 10 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓÒ = 27 Â  
TÝÎ = 25°C  
tØ  
0,009  
0,013  
0,014  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 10 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓËË = 27 Â  
TÝÎ = 25°C  
tÁ ÓËË  
0,10  
0,12  
0,125  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 10 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓËË = 27 Â  
TÝÎ = 25°C  
tË  
0,085  
0,13  
0,135  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 10 A, V†Š = 300 V, L» = 60 nH TÝÎ = 25°C  
V•Š = ±15 V, di/dt = 1500 A/µs (TÝÎ=150°C) TÝÎ = 125°C  
0,14  
0,20  
0,22  
mJ  
mJ  
mJ  
EÓÒ  
R•ÓÒ = 27 Â  
TÝÎ = 150°C  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 10 A, V†Š = 300 V, L» = 60 nH TÝÎ = 25°C  
V•Š = ±15 V, du/dt = 4100 V/µs (TÝÎ=150°C) TÝÎ = 125°C  
0,24  
0,30  
0,32  
mJ  
mJ  
mJ  
EÓËË  
R•ÓËË = 27 Â  
TÝÎ = 150°C  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 360 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
t« ù 8 µs, TÝÎ = 25°C  
t« ù 6 µs, TÝÎ = 150°C  
70  
50  
A
A
I»†  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
RÚ̆™  
2,60 2,90 K/W  
0,80 K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Daniel Kreuzer  
approved by: Marc Buschkühle  
date of publication: 2006-5-19  
revision: 2.0  
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