5秒后页面跳转
FMMT415 PDF预览

FMMT415

更新时间: 2024-11-14 10:34:51
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
2页 97K
描述
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR

FMMT415 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.49
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):25JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.68 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

FMMT415 数据手册

 浏览型号FMMT415的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
AVALANCHE TRANSISTOR  
FMMT415  
FMMT417  
ISSUE 4 - OCTOBER 1995  
FEATURES  
*
*
Specifically designed for Avalanche mode operation  
60A Peak Avalanche Current (Pulse width=20ns)  
E
C
APPLICATIONS  
*
*
*
Laser LED drivers  
B
Fast edge generation  
High speed pulse generators  
PARTMARKING DETAIL –  
FMMT415 – 415  
FMMT417 – 417  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
FMMT415 FMMT417  
UNIT  
V
Collector-Base Voltage  
260  
100  
320  
100  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6
V
Continuous Collector Current  
Peak Collector Current (Pulse Width=20ns)  
Power Dissipation  
500  
60  
mA  
A
ICM  
Ptot  
330  
mW  
°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown  
Voltage  
FMMT415 V(BR)CES  
260  
V
IC=1mA  
Tamb= -55 to +150°C  
FMMT417  
320  
100  
V
V
IC=1mA  
Collector-Emitter Breakdown  
Voltage  
VCEO(sus)  
IC=100µA  
Emitter-Base Breakdown Voltage V(BR)EBO  
6
V
IE=10µA  
Collector Cut-Off Current  
ICBO  
0.1  
10  
VCB=180V  
VCB=180V,  
Tamb=100°C  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
0.1  
0.5  
VEB=4V  
µA  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
V
IC=10mA, IB=1mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
ISB  
hFE  
fT  
0.9  
V
IC=10mA, IB=1mA*  
Current in Second Breakdown  
(Pulsed)  
15  
25  
A
A
VC=200V, CCE=620pF  
VC=250V, CCE=620pF  
Static Forward Current Transfer  
Ratio  
25  
IC=10mA, VCE=10V*  
Transition Frequency  
40  
MHz IC=10mA, VCE=20V  
f=20MHz  
Collector-Base Capacitance  
Ccb  
8
pF  
VCB=20V, IE=0  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 104  

与FMMT415相关器件

型号 品牌 获取价格 描述 数据表
FMMT415TA DIODES

获取价格

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
FMMT415TA ZETEX

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
FMMT415TD DIODES

获取价格

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
FMMT416 DIODES

获取价格

NPN HIGH VOLTAGE AVALANCHE TRANSISTOR IN SOT23
FMMT416TA DIODES

获取价格

Small Signal Bipolar Transistor,
FMMT417 TYSEMI

获取价格

High speed pulse generators, SOT23 NPN Silicon Planar
FMMT417 KEXIN

获取价格

Avalanche Transistor
FMMT417 DIODES

获取价格

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
FMMT417 ZETEX

获取价格

NPN SILICON PLANAR AVALANCHE TRANSISTOR
FMMT417TA DIODES

获取价格

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR