Datasheet > FMMT4400

FMMT4400

更新时间： 2024-09-24 10:34:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
General Purpose Transistors

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中文翻译

获取价格

数据手册

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FMMT4400 数据手册

SMD Type

TransistIoCrs

General Purpose Transistors

FMMT4400

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

General purpose transistors.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

600

Power dissipation

P^tot

330

Operating and storage temperature range

T^j,Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-emitter cut-off current

Base cut-off current

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CEX

IC=0.1mA

IC=1mA

IE=0.1mA

0.1

ìA

VCE=35V VEB(off) =0.4V

VCE=35V VEB(off) =3V

IC=150mA, VCE=1V

I^BEX

DC current gain *

h^FE

150

0.4

I^C=150mA,IB=15mA

I^C=500mA,IB=50mA

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

V^CE(sat)

V^BE(sat)

0.75

200

0.95

1.2

I^C=150mA,IB=15mA

I^C=500mA,IB=50mA

Current-gain-bandwidth product

Output capacitance

f^T

IC=20mA, VCE=10V f=100KHz

MHz

C^obo

C^ibo

6.5

VCB=5V, IE=0, f=100KHz

VBE=0.5V, IC=0, f=100KHz

Input capacitance

VCC=30V, IC=150mA,IB1=15mA

V^BE(off)=2V

Delay time

t^on

VCC=30V, IC=150mA

I^B1= IB2=15mA

Storage time

t^off

255

* Pulse test: tp

300 ìs; d

0.02.

Marking

1KZ

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中文翻译

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