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FMMT415TD PDF预览

FMMT415TD

更新时间: 2024-11-14 11:54:59
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管PC局域网
页数 文件大小 规格书
2页 97K
描述
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR

FMMT415TD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95Factory Lead Time:15 weeks
风险等级:1.9Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:441198
Samacsys Pin Count:3Samacsys Part Category:Transistor BJT NPN
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT23_12
Samacsys Released Date:2018-10-07 10:41:03Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

FMMT415TD 数据手册

 浏览型号FMMT415TD的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
AVALANCHE TRANSISTOR  
FMMT415  
FMMT417  
ISSUE 4 - OCTOBER 1995  
FEATURES  
*
*
Specifically designed for Avalanche mode operation  
60A Peak Avalanche Current (Pulse width=20ns)  
E
C
APPLICATIONS  
*
*
*
Laser LED drivers  
B
Fast edge generation  
High speed pulse generators  
PARTMARKING DETAIL –  
FMMT415 – 415  
FMMT417 – 417  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
FMMT415 FMMT417  
UNIT  
V
Collector-Base Voltage  
260  
100  
320  
100  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6
V
Continuous Collector Current  
Peak Collector Current (Pulse Width=20ns)  
Power Dissipation  
500  
60  
mA  
A
ICM  
Ptot  
330  
mW  
°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown  
Voltage  
FMMT415 V(BR)CES  
260  
V
IC=1mA  
Tamb= -55 to +150°C  
FMMT417  
320  
100  
V
V
IC=1mA  
Collector-Emitter Breakdown  
Voltage  
VCEO(sus)  
IC=100µA  
Emitter-Base Breakdown Voltage V(BR)EBO  
6
V
IE=10µA  
Collector Cut-Off Current  
ICBO  
0.1  
10  
VCB=180V  
VCB=180V,  
Tamb=100°C  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
0.1  
0.5  
VEB=4V  
µA  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
V
IC=10mA, IB=1mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
ISB  
hFE  
fT  
0.9  
V
IC=10mA, IB=1mA*  
Current in Second Breakdown  
(Pulsed)  
15  
25  
A
A
VC=200V, CCE=620pF  
VC=250V, CCE=620pF  
Static Forward Current Transfer  
Ratio  
25  
IC=10mA, VCE=10V*  
Transition Frequency  
40  
MHz IC=10mA, VCE=20V  
f=20MHz  
Collector-Base Capacitance  
Ccb  
8
pF  
VCB=20V, IE=0  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 104  

FMMT415TD 替代型号

型号 品牌 替代类型 描述 数据表
FMMT417TD DIODES

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