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FMMT415 PDF预览

FMMT415

更新时间: 2024-11-14 06:59:43
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管光电二极管
页数 文件大小 规格书
1页 37K
描述
Avalanche Transistor

FMMT415 数据手册

  
SMD Type  
Transistors  
Avalanche Transistor  
FMMT415  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High speed pulse generators  
SOT23 NPN Silicon Planar  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
260  
V
V
100  
6
60  
V
Peak collector current  
A
Collector current  
IC  
500  
mA  
mW  
Power dissipation  
Ptot  
330  
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
260  
100  
6
IC=1mA,Tamb= -55 to +150  
IC=100ìA  
V
V
IE=10ìA  
0.1  
10  
ìA  
ìA  
ìA  
V
VCB=80V  
Collector cutoff current  
ICBO  
VCB=80V, Tamb=100  
VEB=4V  
Emitter cut-off current  
IEBO  
0.1  
0.5  
0.9  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
VCE(sat)  
VBE(sat)  
IC=10mA,IB=1mA  
IC=10mA,IB=1mA  
VC=200V, CCE=620pF  
VC=250V, CCE=620pF  
IC=10mA,VCE=10V  
IC=10mA,VCE=20V,f=20MHz  
VCB=20V, IE=0, f=1MHz  
V
15  
25  
A
Current in second breakdown  
ISB  
A
DC current gain *  
hFE  
fT  
25  
40  
Transition frequency  
Collector-base capacitance  
MHz  
pF  
Ccb  
8
* Pulse test: tp = 300 ìs; d  
0.02.  
Marking  
Marking  
415  
1
www.kexin.com.cn  

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