Datasheet > FMBT1015

FMBT1015

更新时间： 2024-09-10 12:27:35

品牌	Logo	应用领域
戈采 - FCI		晶体晶体管
页数	文件大小	规格书
2页	70K
描述
PNP Epitaxial Planar Transistor Collector - Emitter Voltage VCEO

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FMBT1015 数据手册

Data Sheet

PNP Epitaxial

Planar Transistor

Mechanical Dimensions

.110

Description

.060

.016

.037

.115

.037

.043

.016

.004

Maximum Ratings

Symbol

Value

Units

Ratings

V_CEO

-50

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

V_CBO

V_EBO

-50

-5.0

I_C

P_D

-150

125

Collector Current (Continuous)

Total Device Dissipation FR-5 Board (Note1)

T_A= 25^oC

T_J, T_STG

-55 to 150

^oC

Junction and Storage Temperature

Electrical Characteristics @ 25^oC

Symbol

V_BR(CEO)

Min

-50

Max

---

Unit

Characteristic

Collector - Emitter Breakdown Voltage

(I_C= -1.0mA)

Collector - Base Breakdown Voltage

(I_C= -0.1mA)

V_BR(CBO)

V_BR(EBO)

I_CBO

-50

-5.0

---

Emitter - Base Breakdown Voltage

(I_E= -0.01mA)

Collector Cutoff Current

(V_CB= -50V)

-0.1

µA

---

Emitter Cutoff Current

(V_EB= -5.0V)

I_EBO

---

DC Current Gain

H_FE

(I = -2.0 mA, V_CE= -6.0 V)*

120

600

---

(I^C_C= -150 mA, V_CE= -6.0 V)

Collector - Emitter Saturation Voltage

(I_C= -100 mA, I_B= -10 mA)

V_CE(sat)

V_BE(sat)

f_T

Vdc

MHz

---

-0.3

Base - Emitter Saturation Voltage

(I_C= -100 mA, I_B= -10 mA)

---

-1.1

---

Current - Gain - Bandwidth Product

(I_C= -1.0 mA, V_CE= -10 V, f = 100 MHz)

Output Capacitance

(V_CB= -10 V, f = 1.0 MHz)

C_ob

---

7.0

* Classification of h_FE

Rank

A4Y

A4G

200-400

A4B

350-600

Range

120-240

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