Datasheet > FMBT4403

FMBT4403

更新时间： 2024-09-14 12:27:35

品牌	Logo	应用领域
戈采 - FCI		晶体开关晶体管
页数	文件大小	规格书
2页	73K
描述
PNP Switching Transistor Collector - Emitter Voltage VCEO 40

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FMBT4403 数据手册

Data Sheet

PNP Switching Transistor

Mechanical Dimensions

Description

.110

.060

.016

.037

.115

.037

.043

.016

.004

Maximum Ratings

Symbol

Value

Units

Ratings

V_CEO

V_CBO

V_EBO

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

5.0

I_C

P_D

600

350

Collector Current (Continuous)

Total Device Dissipation FR-5 Board (Note1)

T_A= 25^oC

T_J, T_STG

-55 to 150

^oC

Junction and Storage Temperature

Electrical Characteristics @ 25^oC

Symbol

V_BR(CEO)

Min

Max

---

Unit

Characteristic

Collector - Emitter Breakdown Voltage

(I_C= 1.0mA)

Collector - Base Breakdown Voltage

(I_C= 0.1mA)

V_BR(CBO)

V_BR(EBO)

I_CEX

6.0

---

Emitter - Base Breakdown Voltage

(I_E= 0.01mA)

Collector Cutoff Current

(V_CE= 35V, V_EB= 0.4V)

0.1

µA

---

DC Current Gain

H_FE

(I = 0.1 mA, V_CE= 1.0 V)

100

---

300

---

(I^C= 1.0 mA, V = 1.0 V)

(I^C= 10 mA, V ^CE= 1.0 V)

(I^C= 150 mA, V_CE= 2.0 V)

(I^C_C= 500 mA, V_CE= 2.0 V)

Collector - Emitter Saturation Voltage (Note 3)

(I = 150 mA, I = 15 mA)

V_CE(sat)

V_BE(sat)

f_T

---

0.4

(I^C_C= 500 mA, I_B^B= 50 mA)

0.75

Base - Emitter Saturation Voltage (Note 3)

(I = 150 mA, I = 15 mA)

---

0.95

1.3

(I^C_C= 500 mA, I_B^B= 50 mA)

Current - Gain - Bandwidth Product

(I_C= 20 mA, V_CE= 10 V)

200

---

MHz

中文翻译

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