Datasheet > FMBT2222A-H

FMBT2222A-H

更新时间： 2024-09-10 21:02:31

品牌	Logo	应用领域
FCI-CONNECTOR		/
页数	文件大小	规格书
3页	709K
描述
Transistor

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中文翻译

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FMBT2222A-H 数据手册

FMBT2222A NPN Bipolar Transistor

Mechanical Dimensions

Description

1. BASE

2.EMITTER

3.COLLECTOR

SOT-23

Dimension in mm

FEATURES

y Epitaxial planar die construction

y Complementary PNP Type available(FMMBT2907A)

MARKING: 1P

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

Units

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

600

P_C

300

T_J, T_stg

Junction and Storage Temperature

-55to+150

℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 10μA， I_E=0

I_C= 10mA， I_B=0

I_E=10μA， I_C=0

V_CB=70 V , I_E=0

0.1

300

μA

Collector cut-off current

I_CEX

V_CE=60V , V_BE(off)=3V

V_EB= 3V , I_C=0

Emitter cut-off current

I_EBO

H_FE(1)

H_FE(2)

H_FE(3)

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 0.1mA

V_CE=10V, I_C= 500mA

100

DC current gain

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

0.6

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

I_C=500 mA, I_B= 50mA

1.2

V_CE=20V, I_C= 20mA

f=100MHz

300

MHz

f_T

Delay time

Rise time

Storage time

Fall time

t_d

t_r

V_CC=30V, V_BE(off)=-0.5V

I_C=150mA , I_B1= 15mA

225

t_S

t_f

V_CC=30V, I_C=150mA

I_B1=-I_B2=15mA

12 3

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