Datasheet > FMBT3906

FMBT3906

更新时间： 2024-09-14 12:27:35

品牌	Logo	应用领域
戈采 - FCI		晶体晶体管
页数	文件大小	规格书
2页	61K
描述
PNP General Purpose Transistor Collector - Emitter Voltage VCEO -40

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FMBT3906 数据手册

Data Sheet

PNP General Purpose

Transistor

Description

Mechanical Dimensions

.110

.060

.016

.037

.115

.037

.043

.016

.004

Maximum Ratings

Symbol

Value

Units

Ratings

V_CEO

-40

Vdc

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

V_CBO

V_EBO

I_C

-40

-5.0

-200

Vdc

mAdc

Collector Current (Continuous)

Thermal Characteristics

Symbol

Max

Units

Characteristic

Total Device Dissipation FR-5 Board (Note1)

P_D

225

T_A= 25^oC

Derate above 25^oC

1.8

556

300

mW/^oC

^oC/W

Thermal Resistance

R_θJA

P_D

Total Device Dissipation

Alumina Substrate, T_A= 25^oC (Note 2)

Derate above 25^oC

2.4

417

mW/^oC

^oC/W

^oC

Thermal Resistance

R_θJA

Junction and Storage Temperature

T_J, T_STG

-55 to 150

Notes:

(1) FR-5 = 1.0 x 0.75 x 0.062 in.

(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

(3) Pulse test: Pulse width < 300 µs, duty cycle < 2.0%.

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