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FMB5551_04 PDF预览

FMB5551_04

更新时间: 2024-11-11 03:37:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
3页 72K
描述
NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package

FMB5551_04 数据手册

 浏览型号FMB5551_04的Datasheet PDF文件第2页浏览型号FMB5551_04的Datasheet PDF文件第3页 
FMB5551  
C2  
NPN General Purpose Amplifier  
E1  
C1  
SuperSOT-6 Surface Mount Package  
This device is designed for general purpose high voltage amplifiers  
and gas discharge display driving.  
B2  
E2  
Sourced from process 16.  
See MMBT5551 for characteristics.  
B1  
pin #1  
SuperSOTTM-6  
Mark: .3S  
Dot denotes pin #1  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
160  
180  
6
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
CEO  
V
CBO  
EBO  
V
I
600  
0.7  
mA  
W
C
P
Collector Dissipation (T =25°C) *  
C
a
T
T
Junction Temperature  
150  
°C  
J
Storage Temperature Range  
- 55 ~ 150  
180  
°C  
STG  
R
Thermal Resistance, Junction to Ambient  
°C/W  
θJA  
* Pd total, for both transistors. For each transistor, Pd = 350mW.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
Off Characteristics  
BV  
BV  
BV  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
I
I
I
= 1mA  
160  
180  
6
V
V
V
CEO  
CBO  
EBO  
C
C
E
= 10µA  
= 10µA  
I
Collector Cut-off Current  
V
V
= 120V  
= 120V, T = 100°C  
50  
50  
nA  
µA  
CBO  
CB  
CB  
I
Emitter Cut-off Current  
V
= 4V  
50  
nA  
EBO  
EB  
On Characteristics  
h
DC Current Gain  
V
V
V
= 5V, I = 1mA  
80  
80  
30  
FE  
CE  
CE  
CE  
C
= 5V, I = 10mA  
250  
C
= 5V, I = 50mA  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
= 10mA, I = 1mA  
0.15  
0.2  
V
V
CE  
C
C
B
= 50mA, I = 5mA  
B
I
I
= 10mA, I = 1mA  
1
1
BE  
C
C
B
= 50mA, I = 5mA  
B
Small Signal Characteristics  
TYPICAL  
C
C
Output Capacitance  
V
V
V
= 10V, f = 1MHz  
= 0.5V, f = 1MHz  
6
pF  
pF  
ob  
ib  
CB  
CB  
CE  
Input Capacitance  
20  
f
Current gain Bandwidth Product  
= 10V, I = 10mA  
100  
50  
300  
MHz  
T
C
f = 100MHz  
NF  
Noise Figure  
V
= 5V, I = 200µA  
8
dB  
CE  
C
f = 1MHz, R = 2k, B = 200Hz  
S
h
Small Signal Current Gain  
V
= 10V, I = 1mA  
250  
FE  
CE  
C
f = 1KHz  
©2004 Fairchild Semiconductor Corporation  
Rev. A1, August 2004  

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