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FM25C160B PDF预览

FM25C160B

更新时间: 2024-02-07 07:28:01
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储
页数 文件大小 规格书
13页 451K
描述
16Kb Serial 5V F-RAM Memory

FM25C160B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.8
最大时钟频率 (fCLK):2.1 MHzJESD-30 代码:R-PDIP-T8
JESD-609代码:e0长度:9.817 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:5.08 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

FM25C160B 数据手册

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FM25C160B  
16Kb Serial 5V F-RAM Memory  
Features  
Sophisticated Write Protection Scheme  
16K bit Ferroelectric Nonvolatile RAM  
Hardware Protection  
Software Protection  
Organized as 2,048 x 8 bits  
High Endurance 1 Trillion (1012) Read/Writes  
38 year Data Retention  
Low Power Consumption  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
250 A Active Current (1 MHz)  
4 A (typ.) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configuration  
Up to 20 MHz maximum Bus Frequency  
Direct hardware replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Industrial Temperature -40C to +85C  
8-pin “Green”/RoHS SOIC (-G)  
Description  
Pin Configuration  
The FM25C160B is a 16-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile but operates in other respects as a RAM.  
It provides reliable data retention for 38 years while  
eliminating the complexities, overhead, and system  
level reliability problems caused by EEPROM and  
other nonvolatile memories.  
1
8
7
6
5
CS  
VDD  
HOLD  
SCK  
SI  
2
SO  
3
4
WP  
VSS  
The FM25C160B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. The FM25C160B is capable of  
supporting up to 1012 read/write cycles, or a million  
times more write cycles than EEPROM.  
Pin Name  
/CS  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Function  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
5V  
These capabilities make the FM25C160B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection,  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss.  
Ground  
Ordering Information  
The FM25C160B provides substantial benefits to  
users of serial EEPROM, in a hardware drop-in  
replacement. The FM25C160B uses the high-speed  
SPI bus, which enhances the high-speed write  
capability of F-RAM technology. The specifications  
are guaranteed over an industrial temperature range  
of -40°C to +85°C.  
FM25C160B-G  
“Green” 8-pin SOIC  
FM25C160B-GTR  
“Green” 8-pin SOIC,  
Tape & Reel  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtrons internal  
qualification testing and has reached production status.  
Rev. 3.0  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Jan. 2012  
Page 1 of 13  

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