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FM25C160-GA PDF预览

FM25C160-GA

更新时间： 2024-02-07 15:29:55
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
13页 149K
描述
16Kb FRAM Serial Memory

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FM25C160-GA 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Contact Manufacturer零件包装代码：DIP
包装说明：DIP,针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.8
最大时钟频率 (fCLK)：2.1 MHzJESD-30 代码：R-PDIP-T8
JESD-609代码：e0长度：9.817 mm
内存密度：16384 bit内存集成电路类型：EEPROM
内存宽度：8功能数量：1
端子数量：8字数：2048 words
字数代码：2000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：2KX8封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装形状：RECTANGULAR
封装形式：IN-LINE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：5.08 mm串行总线类型：SPI
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：7.62 mm
最长写入周期时间 (tWC)：10 msBase Number Matches：1

FM25C160-GA 数据手册

 浏览型号FM25C160-GA的Datasheet PDF文件第2页浏览型号FM25C160-GA的Datasheet PDF文件第3页浏览型号FM25C160-GA的Datasheet PDF文件第4页浏览型号FM25C160-GA的Datasheet PDF文件第5页浏览型号FM25C160-GA的Datasheet PDF文件第6页浏览型号FM25C160-GA的Datasheet PDF文件第7页 
AEC Q100 Grade 1 Compliant  
FM25C160 – Automotive Temp.  
16Kb FRAM Serial Memory  
Features  
Sophisticated Write Protection Scheme  
16K bit Ferroelectric Nonvolatile RAM  
•
•
Hardware Protection  
Software Protection  
•
•
•
•
Organized as 2,048 x 8 bits  
High Endurance 1 Trillion (1012) Read/Writes  
NoDelay™ Writes  
Low Power Consumption  
10 µA Standby Current  
Advanced High-Reliability Ferroelectric Process  
•
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configuration  
•
•
•
Up to 15 MHz maximum Bus Frequency  
Direct hardware replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
•
Automotive Temperature -40° C to +125° C  
Qualified to AEC Q100 Specification  
“Green”/RoHS 8-pin SOIC  
o
•
Description  
Pin Configuration  
The FM25C160 is a 16-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile but operates in other respects as a RAM.  
It provides reliable data retention for years while  
eliminating the complexities, overhead, and system  
level reliability problems caused by EEPROM and  
other nonvolatile memories.  
1
8
7
6
5
CS  
VDD  
HOLD  
SCK  
SI  
2
SO  
3
4
WP  
VSS  
Unlike serial EEPROMs, the FM25C160 performs  
write operations at bus speed. No write delays are  
incurred. Data is written to the memory array  
immediately after it has been successfully transferred  
to the device. The next bus cycle may commence  
immediately. In addition, the product offers  
substantial write endurance compared with other  
nonvolatile memories. The FM25C160 is capable of  
supporting up to 1012 read/write cycles -- far more  
than most systems will require from a serial memory.  
Pin Name  
/CS  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Function  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
5V  
These capabilities make the FM25C160 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection,  
where the number of write cycles may be critical, to  
demanding automotive controls where the long write  
time of EEPROM can cause data loss.  
Ground  
Ordering Information  
FM25C160-GA “Green” 8-pin SOIC, Auto-  
motive Grade 1  
The FM25C160 provides substantial benefits to users  
of serial EEPROM, in  
a
hardware drop-in  
replacement. The FM25C160 uses the high-speed SPI  
bus, which enhances the high-speed write capability  
of FRAM technology. The specifications are  
guaranteed over an automotive temperature range of  
-40°C to +125°C.  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 3.1  
July 2007  
Page 1 of 13  
1234567...13

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