Datasheet > FM25C160B_13

FM25C160B_13

更新时间： 2024-01-26 07:37:09

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储
页数	文件大小	规格书
14页	408K
描述
16Kb Serial 5V F-RAM Memory

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中文翻译

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FM25C160B_13 数据手册

FM25C160B

16Kb Serial 5V F-RAM Memory

Features

Sophisticated Write Protection Scheme

Hardware Protection

16K bit Ferroelectric Nonvolatile RAM

Organized as 2,048 x 8 bits

Software Protection

High Endurance 1 Trillion (10¹²) Read/Writes

38 year Data Retention

Low Power Consumption

250 A Active Current (1 MHz)

4 A (typ.) Standby Current

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

Up to 20 MHz maximum Bus Frequency

Direct hardware replacement for EEPROM

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC (-G)

Description

Pin Configuration

The FM25C160B is a 16-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile but operates in other respects as a RAM.

It provides reliable data retention for 38 years while

eliminating the complexities, overhead, and system

level reliability problems caused by EEPROM and

other nonvolatile memories.

VDD

HOLD

SCK

VSS

The FM25C160B performs write operations at bus

speed. No write delays are incurred. Data is written to

the memory array immediately after it has been

successfully transferred to the device. The next bus

cycle may commence immediately without the need

for data polling. The FM25C160B is capable of

supporting up to 10¹²read/write cycles, or a million

times more write cycles than EEPROM.

Pin Name

/CS

/WP

/HOLD

SCK

VDD

VSS

Function

Chip Select

Write Protect

Hold

Serial Clock

Serial Data Input

Serial Data Output

These capabilities make the FM25C160B ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection,

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss.

Ground

Ordering Information

The FM25C160B provides substantial benefits to

users of serial EEPROM, in a hardware drop-in

replacement. The FM25C160B uses the high-speed

SPI bus, which enhances the high-speed write

capability of F-RAM technology. The specifications

are guaranteed over an industrial temperature range

of -40°C to +85°C.

FM25C160B-G

“Green” 8-pin SOIC

“Green” 8-pin SOIC,

Tape & Reel

FM25C160B-GTR

This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s

internal qualification testing and has reached production status.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-84472 Rev. *A

Revised March 07, 2013

12 3 4 5 6 7...14

中文翻译

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与FM25C160B_13相关器件

型号	品牌	获取价格	描述	数据表
FM25C160B-G	CYPRESS	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160B-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM25C160B-GA	CYPRESS	获取价格	Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM25C160B-GTR	CYPRESS	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160B-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM25C160C	RAMTRON	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160C-G	RAMTRON	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160C-GTR	RAMTRON	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160-G	RAMTRON	获取价格	Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM25C160-GA	RAMTRON	获取价格	16Kb FRAM Serial Memory

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