FM25C160C-G

更新时间： 2024-02-17 14:53:58

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
13页	279K
描述
16Kb Serial 5V F-RAM Memory

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技术参数
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FM25C160C-G 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Contact Manufacturer	零件包装代码：	DIP
包装说明：	DIP,	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.8
最大时钟频率 (fCLK)：	2.1 MHz	JESD-30 代码：	R-PDIP-T8
JESD-609代码：	e0	长度：	9.817 mm
内存密度：	16384 bit	内存集成电路类型：	EEPROM
内存宽度：	8	功能数量：	1
端子数量：	8	字数：	2048 words
字数代码：	2000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	2KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装形状：	RECTANGULAR
封装形式：	IN-LINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	5.08 mm	串行总线类型：	SPI
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	7.62 mm
最长写入周期时间 (tWC)：	10 ms	Base Number Matches：	1

FM25C160C-G 数据手册

Preliminary

FM25C160C

16Kb Serial 5V F-RAM Memory

Features

Sophisticated Write Protection Scheme

16K bit Ferroelectric Nonvolatile RAM



Hardware Protection

Software Protection



Organized as 2,048 x 8 bits

High Endurance 1 Trillion (10¹²) Read/Writes

36 year Data Retention at +75C

NoDelay™ Writes

Low Power Consumption



250 A Active Current (1 MHz)

4 A (typ.) Standby Current

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

Industry Standard Configuration



Up to 20 MHz maximum Bus Frequency

Direct hardware replacement for EEPROM

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)



Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC (-G)

Description

Pin Configuration

The FM25C160C is a 16-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile but operates in other respects as a RAM.

It provides reliable data retention for 36 years while

eliminating the complexities, overhead, and system

level reliability problems caused by EEPROM and

other nonvolatile memories.

VDD

HOLD

SCK

VSS

The FM25C160C performs write operations at bus

speed. No write delays are incurred. Data is written to

the memory array immediately after it has been

successfully transferred to the device. The next bus

cycle may commence immediately without the need

for data polling. The FM25C160C is capable of

supporting up to 10¹²read/write cycles, or a million

times more write cycles than EEPROM.

Pin Name

/CS

/WP

/HOLD

SCK

VDD

VSS

Function

Chip Select

Write Protect

Hold

Serial Clock

Serial Data Input

Serial Data Output

These capabilities make the FM25C160C ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection,

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss.

Ground

Ordering Information

The FM25C160C provides substantial benefits to

users of serial EEPROM, in a hardware drop-in

replacement. The FM25C160C uses the high-speed

SPI bus, which enhances the high-speed write

capability of F-RAM technology. The specifications

are guaranteed over an industrial temperature range

of -40°C to +85°C.

FM25C160C-G

“Green” 8-pin SOIC

FM25C160C-GTR

“Green” 8-pin SOIC,

Tape & Reel

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-F-RAM, (719) 481-7000

www.ramtron.com

Rev. 1.1

July 2011

Page 1 of 13

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与FM25C160C-G相关器件

型号	品牌	描述	获取价格	数据表
FM25C160C-GTR	RAMTRON	16Kb Serial 5V F-RAM Memory	获取价格
FM25C160-G	RAMTRON	Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8	获取价格
FM25C160-GA	RAMTRON	16Kb FRAM Serial Memory	获取价格
FM25C160-GTR	RAMTRON	Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8	获取价格
FM25C160-P	ETC	IC 16K SERIAL FRAM	获取价格
FM25C160-S	ETC	IC-SM-16K SERIAL FRAM	获取价格

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