5秒后页面跳转
FM24CL04B PDF预览

FM24CL04B

更新时间: 2024-11-13 10:34:35
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
12页 281K
描述
4Kb Serial 3V F-RAM Memory

FM24CL04B 数据手册

 浏览型号FM24CL04B的Datasheet PDF文件第2页浏览型号FM24CL04B的Datasheet PDF文件第3页浏览型号FM24CL04B的Datasheet PDF文件第4页浏览型号FM24CL04B的Datasheet PDF文件第5页浏览型号FM24CL04B的Datasheet PDF文件第6页浏览型号FM24CL04B的Datasheet PDF文件第7页 
Preliminary  
FM24CL04B  
4Kb Serial 3V F-RAM Memory  
Features  
4K bit Ferroelectric Nonvolatile RAM  
Low Power Operation  
2.7V to 3.65V operation  
Organized as 512 x 8 bits  
100 µA Active Current (100 kHz)  
3 µA (typ.) Standby Current  
High Endurance 1014 Read/Writes  
38 Year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
Industrial Temperature -40° C to +85° C  
8-pin “Green”/RoHS SOIC (-G)  
Fast Two-wire Serial Interface  
Up to 1 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24CL04B is a 4-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by EEPROM  
and other nonvolatile memories.  
1
8
7
6
5
NC  
A1  
A2  
VSS  
VDD  
WP  
SCL  
SDA  
2
3
4
The FM24CL04B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array in the cycle after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. The FM24CL04B is capable of  
supporting 1014 read/write cycles, or a million times  
more write cycles than EEPROM.  
Pin Names  
A1-A2  
SDA  
Function  
Device Select Address 1 and 2  
Serial Data/Address  
Serial Clock  
SCL  
WP  
Write Protect  
These capabilities make the FM24CL04B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
VSS  
Ground  
VDD  
Supply Voltage  
Ordering Information  
FM24CL04B-G  
“Green”/RoHS 8-pin SOIC  
FM24CL04B-GTR “Green”/RoHS 8-pin SOIC,  
Tape & Reel  
The FM24CL04B provides substantial benefits to  
users of serial EEPROM, yet these benefits are  
available in a hardware drop-in replacement. The  
FM24CL04B is available in an industry standard 8-  
pin SOIC package and uses a familiar two-wire  
protocol. The specifications are guaranteed over an  
industrial temperature range of -40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.3  
Feb. 2011  
Page 1 of 12  

与FM24CL04B相关器件

型号 品牌 获取价格 描述 数据表
FM24CL04B_13 CYPRESS

获取价格

4Kb Serial 3V F-RAM Memory
FM24CL04B-G CYPRESS

获取价格

4Kb Serial 3V F-RAM Memory
FM24CL04B-G RAMTRON

获取价格

4Kb Serial 3V F-RAM Memory
FM24CL04B-G INFINEON

获取价格

铁电存储器 (F-RAM)
FM24CL04B-GTR RAMTRON

获取价格

4Kb Serial 3V F-RAM Memory
FM24CL04B-GTR CYPRESS

获取价格

4Kb Serial 3V F-RAM Memory
FM24CL04B-GTR INFINEON

获取价格

铁电存储器 (F-RAM)
FM24CL04-G RAMTRON

获取价格

4Kb FRAM Serial Memory
FM24CL04-GTR RAMTRON

获取价格

Memory Circuit, 512X8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24CL04-S RAMTRON

获取价格

4Kb FRAM Serial Memory