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FM24CL16B-DG PDF预览

FM24CL16B-DG

更新时间： 2024-09-23 10:34:35
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路光电二极管
页数 文件大小 规格书
13页 282K
描述
16Kb Serial 3V F-RAM Memory

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中文翻译

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FM24CL16B-DG 技术参数

生命周期：Transferred零件包装代码：DFN
包装说明：HVSON,针数：8
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.76JESD-30 代码：R-PDSO-N8
长度：4.5 mm内存密度：16384 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
功能数量：1端子数量：8
字数：2048 words字数代码：2000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2KX8
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
认证状态：Not Qualified座面最大高度：0.85 mm
最大供电电压 (Vsup)：3.65 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：NO LEAD端子节距：0.95 mm
端子位置：DUAL宽度：4 mm

FM24CL16B-DG 数据手册

 浏览型号FM24CL16B-DG的Datasheet PDF文件第2页浏览型号FM24CL16B-DG的Datasheet PDF文件第3页浏览型号FM24CL16B-DG的Datasheet PDF文件第4页浏览型号FM24CL16B-DG的Datasheet PDF文件第5页浏览型号FM24CL16B-DG的Datasheet PDF文件第6页浏览型号FM24CL16B-DG的Datasheet PDF文件第7页 
Preliminary  
FM24CL16B  
16Kb Serial 3V F-RAM Memory  
Features  
16K bit Ferroelectric Nonvolatile RAM  
Low Power Operation  
•
•
•
2.7 - 3.65V Operation  
•
•
•
•
•
Organized as 2,048 x 8 bits  
100 µA Active Current (100 kHz)  
3 µA (typ.) Standby Current  
High Endurance 1014 Read/Writes  
38 year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
•
•
Industrial Temperature -40° C to +85° C  
8-pin “Green”/RoHS SOIC and TDFN Packages  
Fast Two-wire Serial Interface  
•
•
•
Up to 1MHz Maximum Bus Frequency  
Direct Hardware Replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24CL16B is a 16-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by EEPROM  
and other nonvolatile memories.  
1
8
7
6
5
VDD  
WP  
NC  
NC  
2
3
NC  
SCL  
SDA  
4
VSS  
The FM24CL16B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array in the cycle after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. The FM24CL16B is capable of  
supporting 1014 read/write cycles, or a million times  
more write cycles than EEPROM.  
Top View  
1
2
3
4
8
VDD  
WP  
SCL  
SDA  
NC  
NC  
NC  
7
6
5
VSS  
Pin Names  
SDA  
Function  
These capabilities make the FM24CL16B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where a long write time  
can cause data loss. The combination of features  
allows the system to write data more frequently, with  
less system overhead.  
Serial Data/Address  
Serial Clock  
SCL  
WP  
VDD  
VSS  
Write Protect  
Supply Voltage  
Ground  
Ordering Information  
FM24CL16B-G  
“Green”/RoHS 8-pin SOIC  
“Green”/RoHS 8-pin SOIC,  
Tape & Reel  
“Green”/RoHS 8-pin TDFN  
“Green”/RoHS 8-pin TDFN,  
Tape & Reel  
The FM24CL16B provides substantial benefits to  
users of serial EEPROM, yet these benefits are  
available in a hardware drop-in replacement. The  
FM24CL16B is available in an industry standard 8-  
pin SOIC package and uses a familiar two-wire  
protocol. The specifications are guaranteed over the  
industrial temperature range from -40°C to +85°C.  
FM24CL16B-GTR  
FM24CL16B-DG  
FM24CL16B-DGTR  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.4  
Feb. 2011  
Page 1 of 13  
1234567...13

中文翻译

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与FM24CL16B-DG相关器件

型号 品牌 获取价格 描述 数据表
FM24CL16B-DGTR RAMTRON

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 		16Kb Serial 3V F-RAM Memory
FM24CL16B-DGTR CYPRESS

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 		16Kb Serial 3V F-RAM Memory
FM24CL16B-DGTR INFINEON

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 		铁电存储器 (F-RAM)
FM24CL16B-G CYPRESS

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 		16Kb Serial 3V F-RAM Memory
FM24CL16B-G RAMTRON

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 		16Kb Serial 3V F-RAM Memory
FM24CL16B-G INFINEON

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 		铁电存储器 (F-RAM)
FM24CL16B-GTR CYPRESS

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 		16Kb Serial 3V F-RAM Memory
FM24CL16B-GTR RAMTRON

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 		16Kb Serial 3V F-RAM Memory
FM24CL16B-GTR INFINEON

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 		铁电存储器 (F-RAM)
FM24CL16-DG RAMTRON

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 		16Kb FRAM Se rial 3V Memory

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