Datasheet > FM24CL64B_13

FM24CL64B_13

更新时间： 2024-09-23 12:06:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储
页数	文件大小	规格书
13页	342K
描述
64Kb Serial 3V F-RAM Memory

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中文翻译

获取价格

数据手册

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FM24CL64B_13 数据手册

AEC Q100 Grade 1 Compliant

FM24CL64B - Automotive Temp.

64Kb Serial 3V F-RAM Memory

Features

Low Power Consumption

64K bit Ferroelectric Nonvolatile RAM

Organized as 8192 x 8 bits

Low Voltage Operation 3.0-3.6V

6 A Standby Current (+85 C)

High Endurance 10 Trillion (10¹³) Read/Writes

NoDelay™ Writes

Industry Standard Configuration

Advanced High-Reliability Ferroelectric Process

Automotive Temperature -40 C to +125 C

Qualified to AEC Q100 Specification

Fast Two-wire Serial Interface

8-pin “Green”/RoHS SOIC Package

Up to 1 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

package using a familiar two-wire (I²C) protocol. The

device is guaranteed over the automotive temperature

range of -40°C to +125°C.

Description

The FM24CL64B is a 64Kbit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

VDD

SCL

SDA

The FM24CL64B performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VSS

Pin Name

A0-A2

SDA

Function

Device Select Address

Serial Data/address

Serial Clock

SCL

VDD

VSS

Write Protect

Supply Voltage

Ground

These capabilities make the FM24CL64B ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Ordering Information

FM24CL64B-GA

“Green”/RoHS 8-pin SOIC,

Automotive Grade 1

“Green”/RoHS 8-pin SOIC,

Automotive Grade 1,

Tape & Reel

FM24CL64B-GATR

The FM24CL64B provides substantial benefits to

users of serial EEPROM, yet these benefits are

available in a hardware drop-in replacement. The

device is available in industry standard 8-pin SOIC

This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s

internal qualification testing and has reached production status.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-84457 Rev. *A

Revised March 07, 2013

12 3 4 5 6 7...13

中文翻译

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与FM24CL64B_13相关器件

型号	品牌	获取价格	描述	数据表
FM24CL64B-DG	CYPRESS	获取价格	64Kb Serial 3V F-RAM Memory
FM24CL64B-DG	RAMTRON	获取价格	Memory Circuit, 8KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8
FM24CL64B-DG	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24CL64B-DGTR	RAMTRON	获取价格	Memory Circuit, 8KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8
FM24CL64B-DGTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24CL64B-G	RAMTRON	获取价格	Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24CL64B-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24CL64B-GA	RAMTRON	获取价格	64Kb Serial 3V F-RAM Memory
FM24CL64B-GA	CYPRESS	获取价格	64Kb Serial 3V F-RAM Memory
FM24CL64B-GATR	CYPRESS	获取价格	64Kb Serial 3V F-RAM Memory

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