Datasheet > FM24CL64B-G

FM24CL64B-G

更新时间： 2024-09-24 15:18:23

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
18页	465K
描述
铁电存储器 (F-RAM)

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中文翻译

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FM24CL64B-G 数据手册

FM24CL64B

64-Kbit (8 K × 8) Serial (I²C) Automotive

F-RAM

64-Kbit (8

K × 8) Serial (I²C) Automotive F-RAM

Features

Functional Description

The FM24CL64B is a 64-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 121 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

■ 64-Kbit ferroelectric random access memory (F-RAM) logically

organized as 8 K × 8

❐ High-endurance 10 trillion (10¹³) read/writes

❐ 121-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the FM24CL64B performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The

FM24CL64B is capable of supporting 10¹³read/write cycles, or

10 million times more write cycles than EEPROM.

■ Fast 2-wire Serial interface (I²C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I²C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 120 A (typ) active current at 100 kHz

❐ 6 A (typ) standby current

■ Voltage operation: V_DD= 3.0 V to 3.6 V

■ Automotive-E temperature: –40 C to +125 C

■ 8-pin small outline integrated circuit (SOIC) package

■ AEC Q100 Grade 1 compliant

These capabilities make the FM24CL64B ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

■ Restriction of hazardous substances (RoHS) compliant

The FM24CL64B provides substantial benefits to users of serial

(I²C) EEPROM as a hardware drop-in replacement. The device

specifications are guaranteed over an automotive-e temperature

range of –40 C to +125 C.

For a complete list of related resources, click here.

Logic Block Diagram

8 K x 8

F-RAM Array

Address

Latch

Counter

Serial to Parallel

Converter

SDA

Data Latch

SCL

Control Logic

A2-A0

Cypress Semiconductor Corporation

Document Number: 001-84457 Rev. *F

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised August 14, 2015

12 3 4 5 6 7...18

中文翻译

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与FM24CL64B-G相关器件

型号	品牌	获取价格	描述	数据表
FM24CL64B-GA	RAMTRON	获取价格	64Kb Serial 3V F-RAM Memory
FM24CL64B-GA	CYPRESS	获取价格	64Kb Serial 3V F-RAM Memory
FM24CL64B-GATR	CYPRESS	获取价格	64Kb Serial 3V F-RAM Memory
FM24CL64B-GATR	RAMTRON	获取价格	64Kb Serial 3V F-RAM Memory
FM24CL64B-GTR	RAMTRON	获取价格	Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24CL64B-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24CL64-DG	RAMTRON	获取价格	64Kb Serial 3V FRAM Memory
FM24CL64-DGTR	RAMTRON	获取价格	暂无描述
FM24CL64-G	RAMTRON	获取价格	64Kb Serial 3V FRAM Memory
FM24CL64-GTR	RAMTRON	获取价格	Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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