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FM24CL64B-GA PDF预览

FM24CL64B-GA

更新时间: 2024-11-12 10:34:35
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
12页 223K
描述
64Kb Serial 3V F-RAM Memory

FM24CL64B-GA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOP, SOP8,.25Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.25
JESD-30 代码:R-PDSO-G8内存密度:65536 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:8
端子数量:8字数:8192 words
字数代码:8000最高工作温度:125 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE电源:3.3 V
认证状态:Not Qualified筛选级别:AEC-Q100
最大待机电流:0.00002 A子类别:SRAMs
最大压摆率:0.00034 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

FM24CL64B-GA 数据手册

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Preliminary  
AEC Q100 Grade 1 Compliant  
FM24CL64B - Automotive Temp.  
64Kb Serial 3V F-RAM Memory  
Features  
Low Power Consumption  
64K bit Ferroelectric Nonvolatile RAM  
Low Voltage Operation 3.0-3.6V  
6 A Standby Current (+85C)  
Organized as 8192 x 8 bits  
High Endurance 10 Trillion (1013) Read/Writes  
NoDelay™ Writes  
Industry Standard Configuration  
Advanced High-Reliability Ferroelectric Process  
Automotive Temperature -40C to +125C  
Qualified to AEC Q100 Specification  
8-pin “Green”/RoHS SOIC Package  
o
Fast Two-wire Serial Interface  
Up to 1 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
package using a familiar two-wire (I2C) protocol. The  
device is guaranteed over the automotive temperature  
range of -40°C to +125°C.  
Description  
The FM24CL64B is a 64Kbit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
Pin Configuration  
1
2
3
4
8
7
6
5
VDD  
WP  
A0  
A1  
A2  
SCL  
SDA  
The FM24CL64B performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, F-RAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
VSS  
Pin Name  
A0-A2  
SDA  
Function  
Device Select Address  
Serial Data/address  
Serial Clock  
SCL  
WP  
VDD  
VSS  
Write Protect  
Supply Voltage  
Ground  
These capabilities make the FM24CL64B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Ordering Information  
FM24CL64B-GA  
“Green”/RoHS 8-pin SOIC,  
Automotive Grade 1  
“Green”/RoHS 8-pin SOIC,  
Automotive Grade 1,  
Tape & Reel  
FM24CL64B-GATR  
The FM24CL64B provides substantial benefits to  
users of serial EEPROM, yet these benefits are  
available in a hardware drop-in replacement. The  
device is available in industry standard 8-pin SOIC  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.1  
June 2011  
Page 1 of 12  

FM24CL64B-GA 替代型号

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MB85RC64PNF-G-JNE1 FUJITSU

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