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FM24CL64-S PDF预览

FM24CL64-S

更新时间: 2024-02-27 22:48:38
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
13页 115K
描述
64Kb Serial 3V FRAM Memory

FM24CL64-S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.71JESD-30 代码:R-PDSO-G8
JESD-609代码:e0内存密度:65536 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:8
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
电源:3/3.3 V认证状态:Not Qualified
最大待机电流:0.000001 A子类别:SRAMs
最大压摆率:0.0004 mA最大供电电压 (Vsup):3.65 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

FM24CL64-S 数据手册

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FM24CL64  
64Kb Serial 3V FRAM Memory  
Features  
Low Power Operation  
64K bit Ferroelectric Nonvolatile RAM  
True 2.7V-3.6V Operation  
75 µA Active Current (100 kHz)  
1 µA Standby Current  
Organized as 8,192 x 8 bits  
Unlimited Read/Write Cycles  
45 year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
Industrial Temperature -40° C to +85° C  
8-pin SOIC and 8-pin DFN Packages  
“Green” Packaging Options  
Fast Two-wire Serial Interface  
Up to 1 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24CL64 is a 64-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 45 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
A0  
VDD  
WP  
2
A1  
3
A2  
SCL  
SDA  
4
VSS  
The FM24CL64 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, FRAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
Top View  
1
2
3
4
8
7
6
5
VDD  
WP  
A0  
A1  
SCL  
SDA  
A2  
VSS  
Pin Names  
A0-A2  
SDA  
SCL  
WP  
Function  
These capabilities make the FM24CL64 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Device Select Address  
Serial Data/address  
Serial Clock  
Write Protect  
Ground  
VSS  
VDD  
Supply Voltage  
The FM24CL64 provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
a hardware drop-in replacement. The FM24CL64 is  
available in industry standard 8-pin SOIC and DFN  
packages using a familiar two-wire protocol. It is  
guaranteed over an industrial temperature range of  
-40°C to +85°C.  
Ordering Information  
FM24CL64-S  
FM24CL64-G  
FM24CL64-DG  
8-pin SOIC  
“Green” 8-pin SOIC  
“Green” 8-pin DFN  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 3.1  
Mar. 2005  
Page 1 of 13  

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