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FM24CL32-GTR PDF预览

FM24CL32-GTR

更新时间: 2024-02-29 12:05:24
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
12页 126K
描述
32Kb Serial 3V F-RAM Memory

FM24CL32-GTR 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.83JESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:32768 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:1
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

FM24CL32-GTR 数据手册

 浏览型号FM24CL32-GTR的Datasheet PDF文件第2页浏览型号FM24CL32-GTR的Datasheet PDF文件第3页浏览型号FM24CL32-GTR的Datasheet PDF文件第4页浏览型号FM24CL32-GTR的Datasheet PDF文件第5页浏览型号FM24CL32-GTR的Datasheet PDF文件第6页浏览型号FM24CL32-GTR的Datasheet PDF文件第7页 
Preliminary  
FM24CL32  
32Kb Serial 3V F-RAM Memory  
Features  
Low Power Operation  
32K bit Ferroelectric Nonvolatile RAM  
True 2.7V-3.6V Operation  
70 µA Active Current (100 kHz)  
12 µA Standby Current  
Organized as 4,096 x 8 bits  
Unlimited Read/Write Cycles  
45 year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
Industrial Temperature -40° C to +85° C  
8-pin “Green”/RoHS SOIC Package  
Fast Two-wire Serial Interface  
Up to 1 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24CL32 is a 32-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 45 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
A0  
VDD  
WP  
2
A1  
3
A2  
SCL  
SDA  
4
VSS  
The FM24CL32 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, F-RAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
Pin Names  
A0-A2  
SDA  
SCL  
WP  
Function  
Device Select Address  
Serial Data/address  
Serial Clock  
Write Protect  
Ground  
VSS  
VDD  
Supply Voltage  
These capabilities make the FM24CL32 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Ordering Information  
FM24CL32-G  
FM24CL32-GTR  
“Green”/RoHS 8-pin SOIC  
“Green”/RoHS 8-pin SOIC,  
Tape & Reel  
The FM24CL32 provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
a hardware drop-in replacement. The FM24CL32 is  
available in an industry standard 8-pin SOIC package  
using a familiar two-wire protocol. It is guaranteed  
over an industrial temperature range of -40°C to  
+85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.0  
May 2009  
Page 1 of 12  

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