Datasheet > FM24CL04B-GTR

FM24CL04B-GTR

更新时间： 2024-09-26 15:19:19

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
18页	454K
描述
铁电存储器 (F-RAM)

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FM24CL04B-GTR 数据手册

FM24CL04B

4-Kbit (512 × 8) Serial (I²C) F-RAM

4-Kbit (512

× 8) Serial (I²C) F-RAM

Features

Functional Description

The FM24CL04B is a 4-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

■ 4-Kbit ferroelectric random access memory (F-RAM) logically

organized as 512 × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See Data Retention and Endurance

on page 10)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the FM24CL04B performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The

FM24CL04B is capable of supporting 10¹⁴read/write cycles, or

100 million times more write cycles than EEPROM.

■ Fast 2-wire Serial interface (I²C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I²C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 100 A active current at 100 kHz

❐ 3 A (typ) standby current

■ Voltage operation: V_DD= 2.7 V to 3.65 V

■ Industrial temperature: –40 C to +85 C

These capabilities make the FM24CL04B ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

The FM24CL04B provides substantial benefits to users of serial

(I²C) EEPROM as a hardware drop-in replacement. The device

specifications are guaranteed over an industrial temperature

range of –40 C to +85 C.

For a complete list of related documentation, click here.

Logic Block Diagram

512 x 8

F-RAM Array

Address

Counter

Latch

Serial to Parallel

SDA

Data Latch

Converter

SCL

Control Logic

A2-A1

Cypress Semiconductor Corporation

Document Number: 001-84455 Rev. *L

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised December 5, 2018

12 3 4 5 6 7...18

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与FM24CL04B-GTR相关器件

型号	品牌	获取价格	描述	数据表
FM24CL04-G	RAMTRON	获取价格	4Kb FRAM Serial Memory
FM24CL04-GTR	RAMTRON	获取价格	Memory Circuit, 512X8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24CL04-S	RAMTRON	获取价格	4Kb FRAM Serial Memory
FM24CL04-STR	RAMTRON	获取价格	Memory Circuit, 512X8, CMOS, PDSO8, MS-012AA, SOIC-8
FM24CL16	RAMTRON	获取价格	16Kb FRAM Se rial 3V Memory
FM24CL16_05	RAMTRON	获取价格	16Kb FRAM Se rial 3V Memory
FM24CL16B	RAMTRON	获取价格	16Kb Serial 3V F-RAM Memory
FM24CL16B_13	CYPRESS	获取价格	16Kb Serial 3V F-RAM Memory
FM24CL16B-DG	CYPRESS	获取价格	16Kb Serial 3V F-RAM Memory
FM24CL16B-DG	RAMTRON	获取价格	16Kb Serial 3V F-RAM Memory

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