Datasheet > FGA30N120FTDTU

FGA30N120FTDTU

更新时间： 2024-11-08 06:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
9页	610K
描述
1200V, 30A Trench IGBT

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FGA30N120FTDTU 数据手册

May 2009

FGA30N120FTD

1200V, 30A Trench IGBT

Features

General Description

•

Field stop trench technology

Using advanced field stop trench technology, Fairchild’s 1200V

trench IGBTs offer superior conduction and switching perfor-

mances, and easy parallel operation with exceptional avalanche

ruggedness. This device is designed for soft switching applica-

tions.

High speed switching

Low saturation voltage: V_CE(sat)= 1.6V @ I_C= 30A

High input impedance

Applications

•

Induction heating and Microwave oven

•

Soft switching applications

TO-3P

Absolute Maximum Ratings

Symbol

Description

Ratings

1200

± 25

Units

V_CES

V_GES

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

@ T_C= 25^oC

@ T_C= 100^oC

I_C

Collector Current

@ T_C= 25^oC

I_{CM (1)}

I_F

Pulsed Collector Current

@ T_C= 100^oC

@ T_C= 25^oC

@ T_C= 100^oC

Diode Continuous Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

339

^oC

P_D

132

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

^oC

T_L

300

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

R_θJC(IGBT)

R_θJC(Diode)

R_θJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Typ.

Max.

0.38

1.2

Units

^oC/W

FGH30N120FTD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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