FGA30N60LSDTU

更新时间： 2024-09-18 06:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体双极型晶体管
页数	文件大小	规格书
9页	770K
描述
MOSFETs and bipolar transistors

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中文翻译

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数据手册

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FGA30N60LSDTU 数据手册

October 2008

FGA30N60LSD

Features

General Description

•

Low saturation voltage: V_CE(sat)=1.1V @ I_C= 30A

High Input Impedance

The FGA30N60LSD is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors.This device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor.

Low Conduction Loss

Applications

•

Solar Inverters

•

UPS, Welder

Absolute Maximum Ratings

Symbol

Description

FGA30N60LSD

Units

V_CES

V_GES

I_C

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

600

± 20

@ T_C

= 25°C

Collector Current

@ T_C= 100°C

I_{CM (1)}

I_FSM

Pulsed Collector Current

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

150

P_D

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T_C

25°C

480

@ T_C= 100°C

192

T_J

-55 to +150

°C

T_stg

T_L

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

R_θJC(IGBT)

R_θJC(Diode)

R_θJA

Parameter

Thermal Resistance, Junction-to-Case

Typ.

Max.

Units

0.26

0.92

°C/W

Thermal Resistance, Junction-to-Ambient

FGA30N60LSD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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