是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | MODULE-7 | 针数: | 7 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.64 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 485 A | 集电极-发射极最大电压: | 650 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1250 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 540 ns | 标称接通时间 (ton): | 190 ns |
VCEsat-Max: | 1.95 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF400R12KE3 | INFINEON |
获取价格 |
62mm C-Series module with trench/fieldstopp IGBT3 and EmCon High Efficiency diode | |
FF400R12KE3 | EUPEC |
获取价格 |
IGBT-inverter | |
FF400R12KE3_B2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
FF400R12KF1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 400A I(C) | M:HL124HW114 | |
FF400R12KF4 | EUPEC |
获取价格 |
IGBT-Modules | |
FF400R12KF4NOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-10 | |
FF400R12KT3 | INFINEON |
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暂无描述 | |
FF400R12KT3_E | INFINEON |
获取价格 |
62mm C-series module with common emitter | |
FF400R12KT3EHOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
FF400R12KT3HOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 |