是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X5 | 针数: | 7 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 2.09 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 240 A | 集电极-发射极最大电压: | 1200 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-XUFM-X5 |
元件数量: | 2 | 端子数量: | 5 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 800 ns |
标称接通时间 (ton): | 325 ns | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FF200R12KE4P | INFINEON | Insulated Gate Bipolar Transistor, |
获取价格 |
|
FF200R12KF | ETC | TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 |
获取价格 |
|
FF200R12KF2 | ETC | TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HD5.6 |
获取价格 |
|
FF200R12KL | ETC | TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 |
获取价格 |
|
FF200R12KS4 | INFINEON | 62mm C-Series module with the fast IGBT2 for high-frequency switching |
获取价格 |
|
FF200R12KS4HOSA1 | INFINEON | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 |
获取价格 |