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FF200R17KE3_07

更新时间： 2024-11-05 10:32:31
品牌 Logo 应用领域
EUPEC 二极管双极性晶体管
页数 文件大小 规格书
8页 265K
描述
62mm C-series module with trench/fieldstop IGBT and EmCon diode

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FF200R17KE3_07 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF200R17KE3  
62mm C-Serien Modul mit Trench/Feldstop IGBT³ und EmCon³Diode  
62mm C-series module with trench/fieldstop IGBT³ and EmCon³ diode  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1700  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
200  
310  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
400  
1250  
+/-20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 200 A, V•Š = 15 V  
I† = 200 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,00 2,45  
2,40  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 8,00 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
5,2  
5,8  
2,30  
3,8  
6,4  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
18,0  
0,60  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
3,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
tÁ ÓÒ  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 200 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 6,8 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,28  
0,30  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 200 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 6,8 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,08  
0,10  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 200 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 6,8 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,80  
1,00  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 200 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 6,8 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,12  
0,20  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 200 A, V†Š = 900 V, L» = 60 nH  
V•Š = ±15 V  
R•ÓÒ = 6,8 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
58,0  
78,0  
mJ  
mJ  
EÓÒ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 200 A, V†Š = 900 V, L» = 60 nH  
V•Š = ±15 V  
R•ÓËË = 6,8 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
43,0  
63,0  
mJ  
mJ  
EÓËË  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 1000 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
t« ù 10 µs, TÝÎ = 125°C  
800  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
RÚ̆™  
0,10 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
0,033  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Helmut Seidelmann  
approved by: Wilhelm Rusche  
date of publication: 2007-3-28  
revision: 2.1  
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