Datasheet > FF200R17KE3_07

FF200R17KE3_07

更新时间： 2022-11-04 11:37:32

品牌	Logo	应用领域
EUPEC		二极管双极性晶体管
页数	文件大小	规格书
8页	265K
描述
62mm C-series module with trench/fieldstop IGBT and EmCon diode

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FF200R17KE3_07 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF200R17KE3

62mm C-Serien Modul mit Trench/Feldstop IGBT³ und EmCon³Diode

62mm C-series module with trench/fieldstop IGBT³ and EmCon³ diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1700

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

200

310

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

400

1250

+/-20

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 200 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

2,00 2,45

2,40

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 8,00 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

5,2

5,8

2,30

3,8

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

18,0

0,60

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

3,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 6,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,28

0,30

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 6,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,08

0,10

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 6,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,80

1,00

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 200 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 6,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,12

0,20

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 200 A, V†Š = 900 V, L» = 60 nH

V•Š = ±15 V

R•ÓÒ = 6,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

58,0

78,0

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 200 A, V†Š = 900 V, L» = 60 nH

V•Š = ±15 V

R•ÓËË = 6,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

43,0

63,0

EÓËË

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 1000 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

t« ù 10 µs, TÝÎ = 125°C

800

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

RÚÌ†™

0,10 K/W

K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

0,033

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Helmut Seidelmann

approved by: Wilhelm Rusche

date of publication: 2007-3-28

revision: 2.1

12 3 4 5 6 7 8

中文翻译

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与FF200R17KE3_07相关器件

型号	品牌	获取价格	描述	数据表
FF200R17KE3HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 390A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
FF200R17KE4	INFINEON	获取价格	62mm C-Series module with fast trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FF200R17KE4HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
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FF200R33KF2CNOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 330A I(C), 3300V V(BR)CES, N-Channel, MODULE-8
FF200R33KF2V	ETC	获取价格	IGBT Module
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