是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.65 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 330 A |
集电极-发射极最大电压: | 3300 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X8 |
元件数量: | 2 | 端子数量: | 8 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2200 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1900 ns | 标称接通时间 (ton): | 480 ns |
VCEsat-Max: | 4.25 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF200R33KF2CNOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 330A I(C), 3300V V(BR)CES, N-Channel, MODULE-8 | |
FF200R33KF2V | ETC |
获取价格 |
IGBT Module | |
FF20-10A-R11A | DDK |
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0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector | |
FF20-11A-R11A | DDK |
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0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector | |
FF20-12A-R11A | DDK |
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0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector | |
FF20-13A-R11A | DDK |
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0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector | |
FF20-14A-R11A | DDK |
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0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector | |
FF20-15A-R11A | DDK |
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0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector | |
FF20-16A-R11A | DDK |
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0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector | |
FF20-17A-R11A | DDK |
获取价格 |
0.3 mm Pitch Ultra Low Profile FPC Back Lock Connector |