Datasheet > FF200R33KF2C

FF200R33KF2C

更新时间： 2024-11-05 02:59:39

品牌	Logo	应用领域
EUPEC		晶体晶体管双极性晶体管局域网
页数	文件大小	规格书
8页	291K
描述
IGBT-inverter

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中文翻译

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技术参数
数据手册

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FF200R33KF2C 技术参数

生命周期：	Transferred	包装说明：	MODULE-8
Reach Compliance Code：	unknown	风险等级：	5.63
Is Samacsys：	N	外壳连接：	ISOLATED
最大集电极电流 (IC)：	330 A	集电极-发射极最大电压：	3300 V
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	JESD-30 代码：	R-XUFM-X8
元件数量：	2	端子数量：	8
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
晶体管元件材料：	SILICON	标称断开时间 (toff)：	1900 ns
标称接通时间 (ton)：	480 ns	Base Number Matches：	1

FF200R33KF2C 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF200R33KF2C

Vorläufige Daten

preliminary data

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

TÝÎ = -25°C

3300

V†Š»

3300

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C

T† = 25°C

I† ÒÓÑ

I†

200

330

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms, T† = 80°C

T† = 25°C

I†ç¢

PÚÓÚ

400

2,20

+/-20

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 200 A, V•Š = 15 V, TÝÎ = 25°C

I† = 200 A, V•Š = 15 V, TÝÎ = 125°C

V†Š ÙÈÚ

3,40 4,25

4,30 5,00

Gate-Schwellenspannung

gate threshold voltage

I† = 20,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•ŠÚÌ

Q•

4,2

5,1

4,00

2,5

6,0

µC

Gateladung

gate charge

V•Š = -15 V ... +15 V, V†Š = 1800V

TÝÎ = 25°C

Interner Gatewiderstand

internal gate resistor

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 3300 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

25,0

1,40

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 200 A, V†Š = 1800 V

V•Š = ±15 V, R•ÓÒ = 5,6 Â, C•Š = 33,0 nF, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 5,6 Â, C•Š = 33,0 nF, TÝÎ = 125°C

tÁ ÓÒ

tØ

0,28

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 200 A, V†Š = 1800 V

V•Š = ±15 V, R•ÓÒ = 5,6 Â, C•Š = 33,0 nF, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 5,6 Â, C•Š = 33,0 nF, TÝÎ = 125°C

0,18

0,20

µs

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 200 A, V†Š = 1800 V

V•Š = ±15 V, R•ÓËË = 7,5 Â, C•Š = 33,0 nF, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 7,5 Â, C•Š = 33,0 nF, TÝÎ = 125°C

tÁ ÓËË

tË

1,55

1,70

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 200 A, V†Š = 1800 V

V•Š = ±15 V, R•ÓËË = 7,5 Â, C•Š = 33,0 nF, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 7,5 Â, C•Š = 33,0 nF, TÝÎ = 125°C

0,20

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 200 A, V†Š = 1800 V, L» = 70 nH

V•Š = ±15 V, R•ÓÒ = 5,6 Â, C•Š = 33,0 nF, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 5,6 Â, C•Š = 33,0 nF, TÝÎ = 125°C

EÓÒ

EÓËË

235

365

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 200 A, V†Š = 1800 V, L» = 70 nH

V•Š = ±15 V, R•ÓËË = 7,5 Â, C•Š = 33,0 nF, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 7,5 Â, C•Š = 33,0 nF, TÝÎ = 125°C

215

255

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎù125°C, V†† = 2500 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

1000

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

RÚÌ†™

57,0 K/kW

K/kW

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

49,0

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Jürgen Biermann

approved by: Christoph Lübke

date of publication: 2003-6-12

revision: 2.0

12 3 4 5 6 7 8

中文翻译

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