生命周期: | Transferred | 包装说明: | MODULE-7 |
Reach Compliance Code: | unknown | 风险等级: | 5.55 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 295 A |
集电极-发射极最大电压: | 1200 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
最高工作温度: | 125 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1040 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 830 ns | 标称接通时间 (ton): | 400 ns |
VCEsat-Max: | 2.15 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF200R12KE4 | INFINEON |
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62 mm 1200 V, 200 A dual IGBT module?with?TRENCHSTOP? IGBT4 and emitter controlled diode. | |
FF200R12KE4HOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
FF200R12KE4P | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FF200R12KF | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 | |
FF200R12KF2 | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HD5.6 | |
FF200R12KL | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 | |
FF200R12KS4 | INFINEON |
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62mm C-Series module with the fast IGBT2 for high-frequency switching | |
FF200R12KS4HOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
FF200R12KS4P | INFINEON |
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Fast short tail IGBT chip | |
FF200R12KT3 | INFINEON |
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半桥 62 mm 1200V 200 A 双开关 IGBT 模块,采用第三代快速 TREN |