Datasheet > FERD20H100STS

FERD20H100STS

更新时间： 2024-11-07 01:03:47

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描述
100 V field-effect rectifier diode

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FERD20H100STS 数据手册

FERD20H100S

100 V field-effect rectifier diode

Datasheet - production data

Description

The device is based on a proprietary technology

that achieves the best in class V_F/I_Rtrade-off for a

given silicon surface. This 100 V rectifier has

been optimized for use in confined applications

where both efficiency and thermal performance

are key. With a lower dependency of leakage

current (I_R) and forward voltage (V_F) in function of

temperature, the thermal runaway risk is reduced.

It is highly recommended to be used in adapters

and chargers.

TO-220AB

IPAK

DPAK

TO-220FPAB

Table 1: Device summary

Symbol

I_F(AV)

Value

20 A

Features

V_RRM

100 V



ST advanced rectifier process

V_F(max.)

I_R(max.)

T_j(max.)

0.415 V

140 µA

175 °C

Stable leakage current over reverse voltage

Reduced leakage current

Low forward voltage drop

High frequency operation

Insulated package TO-220FPAB :



Insulated voltage : 2000 V_RMSsine

May 2016

DocID029022 Rev 2

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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