Datasheet > FERD30H100S

FERD30H100S

更新时间： 2024-11-07 01:08:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
14页	474K
描述
100 V field-effect rectifier diode

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技术参数
数据手册

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FERD30H100S 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.72	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

FERD30H100S 数据手册

FERD30H100S

100 V field-effect rectifier diode

Datasheet - production data

Description

The device is based on a proprietary technology

that achieves the best in class V_F/I_Rtrade-off for a

given silicon surface. This 100 V rectifier has

been optimized for use in confined applications

where both efficiency and thermal performance

are key. With a lower dependency of leakage

current (I_R) and forward voltage (V_F) in function of

temperature, the thermal runaway risk is reduced.

It is highly recommended to be used in adapters

and chargers.

TO-220AB

IPAK

DPAK

Table 1: Device summary

Symbol

I_F(AV)

Value

30 A

Features

V_RRM

100 V



ST advanced rectifier process

V_F(max.)

I_R(max.)

T_j(max.)

0.405 V

130 µA

175 °C

Stable leakage current over reverse voltage

Reduced leakage current

Low forward voltage drop

High frequency operation

April 2016

DocID029159 Rev 1

1/14

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...14

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FERD30M45CR	STMICROELECTRONICS	获取价格	暂无描述
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