Datasheet > FERD30H60C

FERD30H60C

更新时间： 2024-11-26 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		整流二极管
页数	文件大小	规格书
12页	399K
描述
60 V、30 A双路场效应整流二极管（FERD）

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FERD30H60C 数据手册

FERD30H60C

60 V field-effect rectifier diode

Datasheet - production data

Description

The device is based on a proprietary technology

that achieves the best in class V_F/I_Rtrade-off for a

given silicon surface.

This 60 V rectifier has been optimized for use in

confined applications where both efficiency and

thermal performance are key.

This device is suitable for use in adapters and

chargers.

TO-220AB

D²PAK

Table 1: Device summary

Symbol

I_F(AV)

Value

2 x 15 A

60 V

Features

V_RRM



ST advanced rectifier process

Stable leakage current over reverse voltage

Reduced leakage current

Low forward voltage drop

High frequency operation

V_F(typ.)

T_j(max.)

0.41 V

175 °C

September 2017

DocID030944 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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