Datasheet > FERD40H100SG-TR

FERD40H100SG-TR

更新时间： 2024-11-10 01:13:15

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	371K
描述
100 V field-effect rectifier diode

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FERD40H100SG-TR 数据手册

FERD40H100S

100 V field-effect rectifier diode

Datasheet - production data

Description

The device is based on a proprietary technology

that achieves the best in class V_F/I_Rtrade-off for a

given silicon surface. This 100 V rectifier has

been optimized for use in confined applications

where both efficiency and thermal performance

are key. With a lower dependency of leakage

current (I_R) and forward voltage (V_F) in function of

temperature, the thermal runaway risk is reduced.

It is highly recommended to be used in adapters

and chargers.

TO-220AB

D²PAK

Table 1: Device summary

Symbol

I_F(AV)

Value

40 A

Features

V_RRM

100 V



ST advanced rectifier process

Stable leakage current over reverse voltage

Reduced leakage current

Low forward voltage drop

High frequency operation

V_F(max.)

I_R(max.)

T_j(max.)

0.375 V

190 µA

175 °C

April 2016

DocID029155 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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