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FDY300NZ-G PDF预览

FDY300NZ-G

更新时间: 2024-02-15 20:50:29
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 266K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

FDY300NZ-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):0.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.625 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

FDY300NZ-G 数据手册

 浏览型号FDY300NZ-G的Datasheet PDF文件第1页浏览型号FDY300NZ-G的Datasheet PDF文件第2页浏览型号FDY300NZ-G的Datasheet PDF文件第3页浏览型号FDY300NZ-G的Datasheet PDF文件第5页浏览型号FDY300NZ-G的Datasheet PDF文件第6页 
Typical Characteristics  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1MHz  
VGS = 0 V  
ID = 600mA  
4
Ciss  
VDS = 5V  
10V  
3
2
1
0
15V  
Coss  
Crss  
0
0.2  
0.4  
0.6  
0.8  
1
0
4
8
12  
16  
20  
Qg, GATE CHARGE (nC)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 7. Gate Charge Characteristics.  
Figure 8. Capacitance Characteristics.  
30  
25  
20  
15  
10  
5
10  
SINGLE PULSE  
RθJA = 280°C/W  
TA = 25°C  
1ms  
RDS(ON) LIMIT  
1
0.1  
10ms  
100ms  
10s  
1s  
DC  
VGS = 4.5V  
SINGLE PULSE  
RθJA = 280oC/W  
TA = 25oC  
0
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
t1, TIME (sec)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 9. Maximum Safe Operating Area.  
Figure 10. Single Pulse Maximum  
Power Dissipation.  
1
D = 0.5  
RθJA(t) = r(t) * RθJA  
RθJA =280 °C/W  
0.2  
P(pk)  
0.1  
0.1  
0.05  
t1  
t2  
0.02  
0.01  
TJ - TA = P * RθJA(t)  
Duty Cycle, D = t1 / t2  
SINGLE PULSE  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, TIME (sec)  
Figure 11. Transient Thermal Response Curve.  
Thermal characterization performed using the conditions described in Note 1b.  
Transient thermal response will change depending on the circuit board design.  
FDY300NZ Rev B  
www.fairchildsemi.com  

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