Datasheet > FDP86363-F085

FDP86363-F085

更新时间： 2023-09-03 20:39:32

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	535K
描述
N 沟道，PowerTrench®，80V，110A，2.8mΩ

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FDP86363-F085 数据手册

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与FDP86363-F085相关器件

型号	品牌	获取价格	描述	数据表
FDP8860	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDP8860	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，80A，2.5mΩ
FDP8860	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDP8870	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 30V, 156A, 4.1mз
FDP8870	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 30V，156A，4.1mΩ
FDP8870_08	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET
FDP8870_10	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 30V, 156A, 4.1
FDP8870_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Me
FDP8870-F085	ONSEMI	获取价格	30 V、156 A、3.4 mΩ、TO-220N 沟道 PowerTrench®
FDP8874	ONSEMI	获取价格	30V N沟道PowerTrench® MOSFET

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